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TPCP8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCP8201
Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
* * * * * Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance :|Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 10 A (VDS = 30 V) Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm
0.330.05 0.05 M A
8 5
2.40.1
0.475
1 4
B A
0.65 2.90.1
0.05 M B
0.80.05
S
0.025
S
0.170.02
0.28 +0.1 -0.11
1.12 -0.12
+0.13
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 0.12 150 -55~150 mJ A mJ C C Unit V V V A
1Source1 2Gate1 3Source2 4Gate2 5Drain2 6Drain2 7Drain1 8Drain1
1.12 +0.13 -0.12 0.28 +0.1 -0.11
JEDEC JEITA TOSHIBA
2-3V1G
Drain power dissipation (t = 5 s) (Note 2a)
Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b)
Weight: 0.017 g (typ.)
Circuit Configuration
8 7 6 5
Drain power dissipation (t = 5 s) (Note 2b)
Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
1
2
2.80.1
3
4
Marking (Note 6)
8 7 6 5
Note: For Notes 1 to 6, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution.
8201
1 2 3
Lot No.
4
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2004-07-06
TPCP8201
Thermal Characteristics
Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 84.5 C/W 101.6 215.5 C/W 347.2 Unit
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
25.4
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.1 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature. Note 6: on the lower left of the marking indicates Pin 1. Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCP8201
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 6 A ton 4.7 10 V 0V ID = 2.1 A VOUT RL = 7.14 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.1 A VGS = 10 V, ID = 2.1 A VDS = 10 V, ID = 2.1 A Min 30 15 1.3 3.5 Typ. 58 38 7.0 470 60 80 5.2 Max 10 10 2.5 77 50 ns 4.0 nC pF Unit A A V V m S
8.3
VDD 15 V - Duty < 1%, tw = 10 s = 22 10 1.7 2.4
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 4.2 A, VGS = 0 V Min Typ. Max 16.8 -1.2 Unit A V
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TPCP8201
ID - VDS
5 8.0 10 4.5 3.8 3.5 Common source 6.0 Ta = 25C Pulse test 10 10 8.0 6.0 4.5
ID - VDS
Common source 3.8 Ta = 25C Pulse test
Drain current ID (A)
3
Drain current ID (A)
4
8
3.2
6
3.5
2 3.0 1 VGS = 2.8 V 0
4 3.2 2
3.0 VGS = 2.8 V 0 1 2 3 4 5
0
0.2
0.4
0.6
0.8
1.0
0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
8 2.0
VDS - VGS
Common source
(V)
Common source VDS = 10 V
Ta= 25 1.6 Pulse test
Drain current ID (A)
6
VDS Drain-source voltage
25 100 Ta = -55C
Pulse test
1.2
4
0.8
2
0.4 1 0 0 2 4
2
ID = 4A
0
0
1
2
3
4
5
6
8
10
Gate-source voltage VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
100 Common source VDS = 10 V Pulse test Ta = -55C 10 100 25 100
RDS (ON) - ID
Drain-source ON resistance RDS (ON) (m)
Forward transfer admittance Yfs (S)
4.5
30
VGS = 10V
1
Common source Ta = 25C Pulse test 1 10
0.1 0 0.3 1
3
10
10 0.1
Drain current ID (A)
Drain current ID (A)
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TPCP8201
RDS (ON) - Ta
120 Common source Pulse test ID = 4A 2A VGS = 4.5V 60 1A 10 10
IDR - VDS Drain reverse current IDR (A)
5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0
Drain-source ON resistance RDS (ON) (m )
100 80
5 3
40 ID = 4, 2, 1A 20
VGS = 10V
0 -80
-40
0
40
80
120
160
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
1000 3
Vth - Ta Gate threshold voltage Vth (V)
Ciss
(pF)
100
Capacitance C
Coss Crss
2
10
Common source VGS = 0 V f = 1 MHz Ta = 25C
1
Common source VDS = 10 V ID = 200A Pulse test
1 0.1
0.3
1
3
5
10
30 50
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Ambient temperature
Ta
(C)
PD - Ta
2.0
Dynamic input/output characteristics
30 15
Drain power dissipation PD (W)
1.6
(2) 1.2
20
VGS VDS 10 VDD = 6V
Drain-source voltage
15 12 10 6 5 24 12 Common source ID = 4.0A Ta = 25C Pulse test 0 5
0.8 (3) 0.4 (4)
0 0
25
50
75
100
125
150
175
200
0
0
4
8
12
16
Ambient temperature
Ta
(C)
Total gate charge Qg
(nC)
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2004-07-06
Gate-source voltage VGS
(1)
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s
VDS (V)
25 VDD = 24V
(V)
TPCP8201
rth - tw
1000 Single pulse (4) (3) (2) 100 (1)
Transient thermal impedance rth (/W)
10
1 0.001
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
Safe operating area
100
(A)
ID max (Pulse) * 10 1 ms *
Drain current ID
10 ms *
1
* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1
VDSS max 10 100
Drain-source voltage
VDS (V)
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2004-07-06
TPCP8201
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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2004-07-06

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